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采用单晶高κ介电材料的低功耗二维CFET
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Nature，在线发表：2026年11月11日；doi:10.1038/s41586-026-11272-2 一种可转移的单晶锐钛矿型二氧化钛介电材料能与二维半导体形成高质量界面，从而实现接近理想的开关特性、低回滞，以及超低功耗的互补晶体管和反相器。
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